not for new design
RoHS Compliant
Lead-free

BFP740F

ea.
in stock

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BFP740F
BFP740F
ea.

Product details

  • fT
    45 GHz
  • Gmax
    28 dB @900 MHz
  • IC max
    45 mA
  • NFmin
    0.45 dB @900 MHz
  • OIP3
    25 dBm
  • OP1dB
    11 dBm
  • Package
    TSFP-4
  • Ptot
    160 mW
  • VCEO max
    4 V
OPN
BFP740FH6327XTSA1
Product Status not for new design
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BFP740F is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Features

  • Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA
  • High gain Gms: 21 dB at 5.5 GHz, 3 V, 15 mA
  • OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA
  • Low profile and small form factor leadless package

Applications

Documents

Design resources

Developer community

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